The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
May. 20, 2011
Ting-chang Chang, Kaohsiung, TW;
Po-chun Yang, Kaohsiung, TW;
Yu-shih Lin, Kaohsiung, TW;
Shih-ching Chen, Kaohsiung, TW;
Fu-yen Jian, Kaohsiung, TW;
Ting-Chang Chang, Kaohsiung, TW;
Po-Chun Yang, Kaohsiung, TW;
Yu-Shih Lin, Kaohsiung, TW;
Shih-Ching Chen, Kaohsiung, TW;
Fu-Yen Jian, Kaohsiung, TW;
National Sun Yat-Sen University, Kaohsiung, TW;
Abstract
A resistance random access memory element includes a first electrode, an insulating layer, a diffusing metal layer, and a second electrode superimposed in sequence. The insulating layer includes a plurality of pointed electrodes. A method for making a resistance random access memory element includes growing and forming an insulating layer on a surface of a first electrode. A diffusing metal layer is formed on a surface of the insulating layer. A second electrode is mounted on a surface of the diffusing metal layer. A negative pole and a positive pole of a driving voltage are connected with the first and second electrodes, respectively. The diffusing metal in the diffusing metal layer is oxidized into metal ions by the driving voltage. The metal ions are driven into the insulating layer and form a plurality of pointed electrodes after reduction.