The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2013

Filed:

Sep. 22, 2011
Applicants:

Nai-han Cheng, Hsinchu, TW;

Chin-hsiang Lin, Hsin-Chu, TW;

Chi-ming Yang, Hsin-Chu, TW;

Chun-lin Chang, Jhubei, TW;

Chih-hong Hwang, New Taipei County, TW;

Inventors:

Nai-Han Cheng, Hsinchu, TW;

Chin-Hsiang Lin, Hsin-Chu, TW;

Chi-Ming Yang, Hsin-Chu, TW;

Chun-Lin Chang, Jhubei, TW;

Chih-Hong Hwang, New Taipei County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01);
Abstract

An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.


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