The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Nov. 07, 2008
Jisoo Kim, Pleasanton, CA (US);
Conan Chiang, Cupertino, CA (US);
Jun Shinagawa, San Jose, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Conan Chiang, Cupertino, CA (US);
Jun Shinagawa, San Jose, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber.