The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Nov. 30, 2011
Erik P. Geiss, Saratoga Springs, NY (US);
Peter Baars, Dresden, DE;
Erik P. Geiss, Saratoga Springs, NY (US);
Peter Baars, Dresden, DE;
GLOBALFOUNDRIES, Inc., Grand Cayman, KY;
Abstract
A patterning method is provided for fabrication of a semiconductor device structure having conductive contact elements, an interlayer dielectric material overlying the contact elements, an organic planarization layer overlying the interlayer dielectric material, an antireflective coating material overlying the organic planarization layer, and a photoresist material overlying the antireflective coating material. The method creates a patterned photoresist layer from the photoresist material to define oversized openings corresponding to respective conductive contact elements. The antireflective coating is etched using the patterned photoresist as an etch mask. A liner material is deposited overlying the patterned antireflective coating layer. The liner material is etched to create sidewall features, which are used as a portion of an etch mask to form contact recesses for the conductive contact elements.