Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer

Abstract

A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support basehaving a primary surfaceof monoclinic gallium oxide, and a laminate structureof Group III nitride. A semiconductor mesa of the laminate structureincludes a low-temperature GaN buffer layer, an n-type GaN layer, an active layerof a quantum well structure, and a p-type gallium nitride based semiconductor layer. The p-type gallium nitride based semiconductor layerincludes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surfaceof the gallium oxide support baseis inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surfaceof the gallium oxide support base has a flat surface.