The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Apr. 26, 2010
Costel Biloiu, Rockport, MA (US);
Jay Scheuer, Rowley, MA (US);
Joseph Olson, Beverly, MA (US);
Frank Sinclair, Quincy, MA (US);
Daniel Distaso, Merrimac, MA (US);
Costel Biloiu, Rockport, MA (US);
Jay Scheuer, Rowley, MA (US);
Joseph Olson, Beverly, MA (US);
Frank Sinclair, Quincy, MA (US);
Daniel Distaso, Merrimac, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucestor, MA (US);
Abstract
An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.