The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8587112 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 19, 2013

Filed:

Apr. 23, 2012
Applicants:

Charles L. Arvin, Poughkeepsie, NY (US);

Hai P. Longworth, Poughkeepsie, NY (US);

David J. Russell, Apalachin, NY (US);

Krystyna W. Semkow, Poughquag, NY (US);

Inventors:

Charles L. Arvin, Poughkeepsie, NY (US);

Hai P. Longworth, Poughkeepsie, NY (US);

David J. Russell, Apalachin, NY (US);

Krystyna W. Semkow, Poughquag, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electroless Cu layer is formed on each side of a packaging substrate containing a core, at least one front metal interconnect layer, and at least one backside metal interconnect layer. A photoresist is applied on both electroless Cu layers and lithographically patterned. First electrolytic Cu portions are formed on exposed surfaces of the electroless Cu layers, followed by formation of electrolytic Ni portions and second electrolytic Cu portions. The electrolytic Ni portions provide enhanced resistance to electromigration, while the second electrolytic Cu portions provide an adhesion layer for a solder mask and serves as an oxidation protection layer. Some of the first electrolytic Cu may be masked by lithographic means to block formation of electrolytic Ni portions and second electrolytic Cu portions thereupon as needed. Optionally, the electrolytic Ni portions may be formed directly on electroless Cu layers.


Find Patent Forward Citations

Arvin, Charles. (2013). Underbump metallurgy employing an electrolytic cu / electorlytic ni / electrolytic cu stack (U.S. Patent No. 8587112). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8587112

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