The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jul. 03, 2012
Hans-joachim Schulze, Taufkirchen, DE;
Franz-josef Niedernostheide, Muenster, DE;
Yvonne Gawlina, Pullach im Isartal, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Franz-Josef Niedernostheide, Muenster, DE;
Yvonne Gawlina, Pullach im Isartal, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for forming a laterally varying n-type doping concentration is provided. The method includes providing a semiconductor wafer with a first surface, a second surface arranged opposite to the first surface and a first n-type semiconductor layer having a first maximum doping concentration, implanting protons of a first maximum energy into the first n-type semiconductor layer, and locally treating the second surface with a masked hydrogen plasma. Further, a semiconductor device is provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile