The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Dec. 27, 2010
Akira Inoue, Osaka, JP;
Junko Iwanaga, Osaka, JP;
Ryou Kato, Osaka, JP;
Masaki Fujikane, Osaka, JP;
Toshiya Yokogawa, Osaka, JP;
Akira Inoue, Osaka, JP;
Junko Iwanaga, Osaka, JP;
Ryou Kato, Osaka, JP;
Masaki Fujikane, Osaka, JP;
Toshiya Yokogawa, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride-based semiconductor light-emitting deviceincludes: an n-type GaN substratewhich has an m-plane principal surface; a current diffusing layerprovided on the n-type GaN substrate; an n-type nitride semiconductor layerprovided on the current diffusing layer; an active layerprovided on the n-type nitride semiconductor layer; a p-type nitride semiconductor layerprovided on the active layer; a p-electrodewhich is in contact with the p-type nitride semiconductor layer; and an n-electrodewhich is in contact with the n-type GaN substrateor the n-type nitride semiconductor layer. The donor impurity concentration of the n-type nitride semiconductor layeris not more than 5×10cm, and the donor impurity concentration of the current diffusing layeris ten or more times the donor impurity concentration of the n-type nitride semiconductor layer