The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Oct. 25, 2010
Jin-dong Song, Seoul, KR;
Sang Hoon Shin, Busan, KR;
Hyung-jun Kim, Seoul, KR;
Hyun Cheol Koo, Seoul, KR;
Suk Hee Han, Seoul, KR;
Joonyeon Chang, Seoul, KR;
Jin-Dong Song, Seoul, KR;
Sang Hoon Shin, Busan, KR;
Hyung-jun Kim, Seoul, KR;
Hyun Cheol Koo, Seoul, KR;
Suk Hee Han, Seoul, KR;
Joonyeon Chang, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a high-speed p-type semiconductor device using the 2DHG. To this end, the method includes providing a semiconductor substrate; growing a first semiconductor layer on the semiconductor substrate, growing a second semiconductor layer with a different electron affinity or band gap from the first semiconductor layer on the first semiconductor layer, and growing a third semiconductor layer with a different electron affinity or band gap from the second semiconductor layer, thereby forming a type-2 quantum well; and forming a p-type doping layer in the vicinity of the type-2 quantum well, thereby generating the 2DHG.