The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Dec. 16, 2011
Jen-yi Chen, Linnei Township, Yunlin County, TW;
Kun-ei Chen, Beimen Township, Tainan County, TW;
Ling-sung Wang, Tainan, TW;
Chen-chieh Chiang, Kaohsiung, TW;
Jen-Yi Chen, Linnei Township, Yunlin County, TW;
Kun-Ei Chen, Beimen Township, Tainan County, TW;
Ling-Sung Wang, Tainan, TW;
Chen-Chieh Chiang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Abstract
A method of patterning a material layer of a semiconductor device is disclosed, the method including treating a material layer above a semiconductor substrate with plasma oxygen; depositing a layer of photoresist over a first surface of the material layer after the treating of the material layer; patterning the layer of photoresist, thereby forming a patterned photoresist, exposing portions of the material layer; etching the exposed portions of at least the material layer to form at least one contact via in the material layer extending to a source or drain region of a device at a surface of the substrate; and removing the patterned photoresist from the first surface of the material layer.