The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Mar. 20, 2012
Applicants:
Eiichi Soda, Kawasaki, JP;
Yunpeng Yin, Armonk, NY (US);
Sivananda Kanakasabapathy, Armonk, NY (US);
Inventors:
Eiichi Soda, Kawasaki, JP;
Yunpeng Yin, Armonk, NY (US);
Sivananda Kanakasabapathy, Armonk, NY (US);
Assignees:
Renesas Electronics Corporation, Kanagawa, JP;
IBM Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
An improved method of making interconnect structures with self-aligned vias in semiconductor devices utilizes sidewall image transfer to define the trench pattern. The sidewall height acts as a sacrificial mask during etching of the via and subsequent etching of the trench, so that the underlying metal hard mask is protected. Thinner hard masks and/or a wider range of etch chemistries may thereby be utilized.