The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jun. 29, 2012
Pengfei Wang, Shanghai, CN;
Xi Lin, Shanghai, CN;
Wei Liu, Shanghai, CN;
Qingqing Sun, Shanghai, CN;
Wei Zhang, Shanghai, CN;
Pengfei Wang, Shanghai, CN;
Xi Lin, Shanghai, CN;
Wei Liu, Shanghai, CN;
Qingqing Sun, Shanghai, CN;
Wei Zhang, Shanghai, CN;
FUDAN University, Shanghai, CN;
Abstract
The present invention belongs to the technical field of semiconductors and specifically relates to a method for manufacturing a vertical-channel tunneling transistor. In the present invention, the surrounding gate gate structure improves the control capacity of the gate and the source of narrow band gap material can enhance the device driving current. The method for manufacturing a vertical-channel tunneling transistor put forward by the present invention capable of controlling the channel length precisely features simple process, easy control and reduction of production cost.