The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Mar. 22, 2007
Uzodinma Okoroanyanwu, Northampton, MA (US);
Harry J. Levinson, Saratoga, CA (US);
Ryoung-han Kim, San Jose, CA (US);
Thomas Wallow, San Carlos, CA (US);
Uzodinma Okoroanyanwu, Northampton, MA (US);
Harry J. Levinson, Saratoga, CA (US);
Ryoung-Han Kim, San Jose, CA (US);
Thomas Wallow, San Carlos, CA (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.