The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8586133 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 19, 2013

Filed:

Jul. 02, 2012
Applicants:

Igor C. Ivanov, Dublin, CA (US);

Weiguo Zhang, San Jose, CA (US);

Artur Kolics, Dublin, CA (US);

Inventors:

Igor C. Ivanov, Dublin, CA (US);

Weiguo Zhang, San Jose, CA (US);

Artur Kolics, Dublin, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 20/02 (2006.01); C23C 20/04 (2006.01); H01L 21/28 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.


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Ivanov, Igor. (2013). Method for strengthening adhesion between dielectric layers formed adjacent to metal layers (U.S. Patent No. 8586133). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8586133

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