The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jul. 22, 2010
Der-chyang Yeh, Hsin-Chu, TW;
Li-weng Chang, Taipei County, TW;
Hua-chou Tseng, Hsin-Chu, TW;
Chih-ping Chao, Hsin-Chu, TW;
Der-Chyang Yeh, Hsin-Chu, TW;
Li-Weng Chang, Taipei County, TW;
Hua-Chou Tseng, Hsin-Chu, TW;
Chih-Ping Chao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is a semiconductor device that includes a first transistor and a second transistor that are formed on the same substrate. The first transistor includes a first collector, a first base, and a first emitter. The first collector includes a first doped well disposed in the substrate. The first base includes a first doped layer disposed above the substrate and over the first doped well. The first emitter includes a doped element disposed over a portion of the first doped layer. The second transistor includes a second collector, a second base, and a second emitter. The second collector includes a doped portion of the substrate. The second base includes a second doped well disposed in the substrate and over the doped portion of the substrate. The second emitter includes a second doped layer disposed above the substrate and over the second doped well.