The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
May. 12, 2011
An-hung Lin, New Taipei, TW;
Hong-ze Lin, Hsinchu, TW;
Bo-jui Huang, Hsinchu, TW;
Wei-shan Liao, Yunlin County, TW;
Ting-zhou Yan, Kaohsiung, TW;
Kun-yi Chou, New Taipei, TW;
Chun-wei Chen, Hsinchu, TW;
An-Hung Lin, New Taipei, TW;
Hong-Ze Lin, Hsinchu, TW;
Bo-Jui Huang, Hsinchu, TW;
Wei-Shan Liao, Yunlin County, TW;
Ting-Zhou Yan, Kaohsiung, TW;
Kun-Yi Chou, New Taipei, TW;
Chun-Wei Chen, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type. The gate is disposed on the substrate and covers a portion of the field oxide layer. The second deep well having a second conductive type is disposed in the substrate and next to the first deep well. The first dopant region having a second conductive type is disposed in the second deep well. The doping concentration of the first dopant region is higher than the doping concentration of the second deep well.