The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jun. 04, 2010
Tao Long, Shanghai, CN;
Yiming Wang, Shanghai, CN;
Zhongyuan Jin, Shanghai, CN;
Other;
Abstract
A trench MOSFET rectifier includes oxide layers having different thicknesses formed in different regions of the devices. The rectifying device also includes a source region of first conductivity type at a surface of each mesa region and a body region of a second conductivity type beneath each source region. The rectifying device also includes a dielectric layer lining the bottom and sidewall surfaces of the trenches, the portion of the dielectric layer on the bottom surface being thicker than the portion on the sidewall surface. A doped region underlies each of the first plurality of trenches. A polycrystalline silicon region filling each of the first plurality of trenches to form a gate region in each trench. A conductive material fills a plurality of contact trenches and forms ohmic contacts with the source region, body region, and gate region.