The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Jan. 28, 2011
Po-min Tu, Hukou, TW;
Shih-cheng Huang, Hukou, TW;
Wen-yu Lin, Hukou, TW;
Chih-peng Hsu, Hukou, TW;
Shih-hsiung Chan, Hukou, TW;
Po-Min Tu, Hukou, TW;
Shih-Cheng Huang, Hukou, TW;
Wen-Yu Lin, Hukou, TW;
Chih-Peng Hsu, Hukou, TW;
Shih-Hsiung Chan, Hukou, TW;
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;
Abstract
A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile