The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Dec. 02, 2011
Applicant:
Huanxin Liu, Beijing, CN;
Inventor:
Huanxin Liu, Beijing, CN;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device for improving the performance of 'Σ' shaped embedded source/drain regions is disclosed. A 'U' shaped recess is formed in a Si substrate. The recess is treated with a surfactant, the amount of surfactant adsorbed on the recess sidewalls being greater than that on the recess bottom. An oxide is formed on the bottom. The presence of surfactant on the sidewalls, prevents oxide from forming thereon. The surfactant on the sidewalls is then removed and an orientation selective wet etching process is performed on the sidewalls. The oxide protects the Si at the bottom is from being etched.