The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Dec. 21, 2007
Applicant:
Takeshi Ishiguro, Fukushima-ken, JP;
Inventor:
Takeshi Ishiguro, Fukushima-ken, JP;
Assignee:
Icemos Technology Ltd., Belfast, Northern Ireland, GB;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for manufacturing trench type semiconductor devices involve refilling the trenches after high temperature processing steps are performed. The methods allow thermally unstable materials to be used as refill materials for the trenches of the device. Trench type semiconductor devices containing thermally unstable refill materials are also provided. In particular, methods of manufacturing and devices of a trench type semiconductor devices containing organic refill materials are provided.