The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Nov. 18, 2010
Kangguo Cheng, Guilderland, NY (US);
Louis Lu-chen Hsu, Fishkill, NY (US);
Jack A. Mandelman, Essex Junction, VT (US);
William R. Tonti, Essex Junction, VT (US);
Kangguo Cheng, Guilderland, NY (US);
Louis Lu-Chen Hsu, Fishkill, NY (US);
Jack A. Mandelman, Essex Junction, VT (US);
William R. Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Field effect transistors and method for forming filed effect transistors. The field effect transistors including: a gate dielectric on a channel region in a semiconductor substrate; a gate electrode on the gate dielectric; respective source/drains in the substrate on opposite sides of the channel region; sidewall spacers on opposite sides of the gate electrode proximate to the source/drains; and wherein the sidewall spacers comprise a material having a dielectric constant lower than that of silicon dioxide and capable of absorbing laser radiation.