The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Dec. 16, 2011
Jhun Hua Chen, Chang Hua, TW;
Yu-lung Tung, Hsinchu County, TW;
Chi-tien Chen, New Taipei, TW;
Hua-tai Lin, Hsinchu, TW;
Hsiang-lin Chen, Hsinchu, TW;
Hung Chang Hsieh, Hsinchu, TW;
Yi-fan Chen, New Taipei, TW;
Jhun Hua Chen, Chang Hua, TW;
Yu-Lung Tung, Hsinchu County, TW;
Chi-Tien Chen, New Taipei, TW;
Hua-Tai Lin, Hsinchu, TW;
Hsiang-Lin Chen, Hsinchu, TW;
Hung Chang Hsieh, Hsinchu, TW;
Yi-Fan Chen, New Taipei, TW;
Abstract
A pattern on a semiconductor substrate is formed using two separate etching processes. The first etching process removes a portion of an intermediate layer above an active region of the substrate. The second etching process exposes a portion of the active region of the substrate. A semiconductor device formed using the patterning method has a decreased mask error enhancement factor and increased critical dimension uniformity than the prior art.