The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2013

Filed:

Mar. 31, 2009
Applicants:

Katsutoshi Takagi, Hyogo, JP;

Masaya Ehira, Hyogo, JP;

Yuki Iwasaki, Hyogo, JP;

Hiroshi Goto, Hyogo, JP;

Inventors:

Katsutoshi Takagi, Hyogo, JP;

Masaya Ehira, Hyogo, JP;

Yuki Iwasaki, Hyogo, JP;

Hiroshi Goto, Hyogo, JP;

Assignees:

Kobelco Research Institute Inc., Kobe-shi, JP;

Kobe Steel, Ltd., Kobe-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C25B 11/00 (2006.01); C25B 13/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from ¼t (t: thickness) to ¾t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.


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