The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Nov. 09, 2011
Viktor Markov, Sunnyvale, CA (US);
Jong-won Yoo, Cupertino, CA (US);
Satish Bansal, Milpitas, CA (US);
Alexander Kotov, Sunnyvale, CA (US);
Viktor Markov, Sunnyvale, CA (US);
Jong-Won Yoo, Cupertino, CA (US);
Satish Bansal, Milpitas, CA (US);
Alexander Kotov, Sunnyvale, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A method of decreasing the test time to determine data retention (e.g. leakage current) of a memory cell having a floating gate for the storage of charges thereon. The memory cell is characterized by the leakage current having a rate of leakage which is dependent upon the absolute value of the voltage of the floating gate. The memory cell is further characterized by a first erase voltage and a first programming voltage, applied during normal operation, and a first read current detected during normal operation. The method applies a voltage greater than the first erase voltage or greater than the first programming voltage, to over erase the floating gate. The memory cell including the floating gate is subject to a single high temperature bake. The memory cell is then tested for data retention of the floating gate based on the single high temperature bake.