The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Mar. 21, 2011
Tetsuji Kunitake, Kuwana, JP;
Takashi Shigeoka, Fujisawa, JP;
Takayuki Tsukamoto, Yokkaichi, JP;
Hironori Wakai, Atsugi, JP;
Hisashi Kato, Mie, JP;
Tetsuji Kunitake, Kuwana, JP;
Takashi Shigeoka, Fujisawa, JP;
Takayuki Tsukamoto, Yokkaichi, JP;
Hironori Wakai, Atsugi, JP;
Hisashi Kato, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device according to an embodiment herein includes a memory cell array. The memory cell array includes memory cells each provided between a first line and a second line and each including a variable resistor. A control circuit applies through the first and second lines a voltage necessary for a forming operation of the memory cell. A current limiting circuit limits a value of a current flowing across the memory cell during the forming operation to a certain limit value. The control circuit repeats an operation of applying the voltage by setting the limit value to a certain value and an operation of changing the limit value from the certain value, until forming of the memory cell is achieved.