The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Jun. 30, 2003
Mark G. Johnson, Los Altos, CA (US);
N. Johan Knall, Sunnyvale, CA (US);
S. Brad Herner, San Jose, CA (US);
Mark G. Johnson, Los Altos, CA (US);
N. Johan Knall, Sunnyvale, CA (US);
S. Brad Herner, San Jose, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
Silicon nitride antifuses can be advantageously used in memory arrays employing diode-antifuse cells. Silicon nitride antifuses can be ruptured faster and at a lower breakdown field than antifuses formed of other materials, such as silicon dioxide. Examples are given of monolithic three dimensional memory arrays using silicon nitride antifuses with memory cells disposed in rail-stacks and pillars, and including PN and Schottky diodes. Pairing a silicon nitride antifuse with a low-density, high-resistivity conductor gives even better device performance.