The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Aug. 09, 2012
Andrei Mihnea, San Jose, CA (US);
Deepak C. Sekar, Sunnyvale, CA (US);
George Samachisa, San Jose, CA (US);
Roy Scheuerlein, Cupertino, CA (US);
LI Xiao, San Jose, CA (US);
Andrei Mihnea, San Jose, CA (US);
Deepak C. Sekar, Sunnyvale, CA (US);
George Samachisa, San Jose, CA (US);
Roy Scheuerlein, Cupertino, CA (US);
Li Xiao, San Jose, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P−/N+ device or a P+/N−/P+ device.