The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
May. 24, 2012
Tsung-yi Huang, Hsinchu, TW;
Chien-wei Chiu, Beigang Township, Yunlin County, TW;
Chien-hao Huang, Magong, TW;
Tsung-Yi Huang, Hsinchu, TW;
Chien-Wei Chiu, Beigang Township, Yunlin County, TW;
Chien-Hao Huang, Magong, TW;
Richtek Technology Corporation, Hsin-Chu, TW;
Abstract
The present invention discloses a double diffused metal oxide semiconductor (DMOS) device. The DMOS device is formed in a substrate, and includes a high voltage well, a first field oxide region, a first gate, a first source, a drain, a body region, a body electrode, a second field oxide region, a second gate, and a second source. The second field oxide region and the first field oxide region are separated by the high voltage well and the body region. A part of the second gate is on the second field oxide region, and another part of the second gate is on the body region. The second gate is electrically connected to the first gate, and the second source is electrically connected to the first source, such that when the DMOS device is ON, a surface channel and a buried channel are formed.