The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Mar. 24, 2010
Tseng-hsun Liu, Taipei, TW;
Chiu-ling Lee, Hsinchu, TW;
Zheng-hong Chen, Taoyuan County, TW;
Yi-ming Wang, Hsinchu, TW;
Ching-ming Lee, Miaoli County, TW;
Tseng-Hsun Liu, Taipei, TW;
Chiu-Ling Lee, Hsinchu, TW;
Zheng-Hong Chen, Taoyuan County, TW;
Yi-Ming Wang, Hsinchu, TW;
Ching-Ming Lee, Miaoli County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a lateral-diffusion metal-oxide semiconductor (LDMOS) device is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a first region and a second region both having a first conductive type in the semiconductor substrate, wherein the first region not contacting the second region; and performing a thermal process to diffuse the dopants within the first region and the second region into the semiconductor substrate to form a deep well, wherein the doping concentration of the deep well is less than the doping concentration of the first region and the second region.