The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2013

Filed:

Apr. 01, 2008
Applicants:

Zsolt Nenyei, Blaustein, DE;

Paul Janis Timans, Mountain View, CA (US);

Inventors:

Zsolt Nenyei, Blaustein, DE;

Paul Janis Timans, Mountain View, CA (US);

Assignee:

Mattson Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A21B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other property can be used as a basis for control during a processing cycle. Thus, the witness structure may be controlled 'closed-loop' while the wafer is heated 'open-loop.' As a further example, a heat flux between the RTP heating system and witness structure can be used to determine radiant energy from the heating system that is incident on the witness structure. One or more control actions can be taken based on this incident energy.


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