The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Feb. 27, 2012
Yosuke Ota, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Atsushi Sano, Toyama, JP;
Osamu Kasahara, Toyama, JP;
Kazuyuki Okuda, Toyama, JP;
Kiyohiko Maeda, Toyama, JP;
Yosuke Ota, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Atsushi Sano, Toyama, JP;
Osamu Kasahara, Toyama, JP;
Kazuyuki Okuda, Toyama, JP;
Kiyohiko Maeda, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiHCl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.