The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Oct. 23, 2009
Tadahiro Ohmi, Sendai, JP;
Akinobu Teramoto, Sendai, JP;
Tatsunori Isogai, Sendai, JP;
Hiroaki Tanaka, Sendai, JP;
Tadahiro Ohmi, Sendai, JP;
Akinobu Teramoto, Sendai, JP;
Tatsunori Isogai, Sendai, JP;
Hiroaki Tanaka, Sendai, JP;
National University Corporation Tohoku University, Miyagi, JP;
Foundation for Advancement of International Science, Ibaraki, JP;
Abstract
A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile