The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Apr. 02, 2008
Applicants:
Daniel-camille Bensahel, Grenoble, FR;
Yves Morand, Grenoble, FR;
Inventors:
Daniel-Camille Bensahel, Grenoble, FR;
Yves Morand, Grenoble, FR;
Assignees:
STMicroelectronics SA, Montrouge, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductive device is fabricated by forming, within a semiconductive substrate, at least one continuous region formed of a material having a non-uniform composition in a direction substantially perpendicular to the thickness of the substrate.
Bensahel, Daniel-Camille. (2013). Method of fabricating a device with a concentration gradient and the corresponding device (U.S. Patent No. 8575011). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8575011
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile