The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Apr. 11, 2012
Ching-wen Hung, Tainan, TW;
Chih-sen Huang, Tainan, TW;
Ling-chun Chou, Yun-Lin County, TW;
I-chang Wang, Tainan, TW;
Ching-Wen Hung, Tainan, TW;
Chih-Sen Huang, Tainan, TW;
Ling-Chun Chou, Yun-Lin County, TW;
I-Chang Wang, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming a semiconductor device includes firstly providing a gate structure disposed on a substrate and a first nitride material layer disposed on the gate structure, secondly performing a protective step to modify the first nitride material layer in the presence of oxygen, then forming a second nitride material layer on the substrate, and later performing a removal step to remove the second nitride material layer without substantially slashing the modified first nitride material layer.