The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Oct. 08, 2010
Sang-hyun Yun, Suwon-si, KR;
Cha-dong Kim, Cheonan-si, KR;
Jung-in Park, Suwon-si, KR;
Hi-kuk Lee, Yongin-si, KR;
Sang-Hyun Yun, Suwon-si, KR;
Cha-Dong Kim, Cheonan-si, KR;
Jung-In Park, Suwon-si, KR;
Hi-Kuk Lee, Yongin-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
An approach for patterning and etching without a mask is provided in a manufacturing a thin-film transistor, a gate electrode, a gate insulating layer, a semiconductor layer, an ohmic contact layer and source metal layer of a substrate. A first photoresist pattern including a first photo pattern and a second photo pattern is formed using a digital exposure device by generating a plurality of spot beams, the first photo pattern is formed to a first region of the base substrate and has a first thickness, and the second photo pattern is formed to a second region adjacent to the first region, and has a second thickness and a width in a range of about 50% to about 60% of a diameter of the spot beam. The source metal layer is patterned to form a source electrode and a drain electrode, and the source electrode and the drain electrode are spaced apart from each other in the first region of an active pattern.