The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Mar. 05, 2008
Osamu Yamada, Ehime, JP;
Hisashi Minemoto, Osaka, JP;
Kouichi Hiranaka, Ehime, JP;
Takeshi Hatakeyama, Ehime, JP;
Takatomo Sasaki, Osaka, JP;
Yusuke Mori, Osaka, JP;
Fumio Kawamura, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Osamu Yamada, Ehime, JP;
Hisashi Minemoto, Osaka, JP;
Kouichi Hiranaka, Ehime, JP;
Takeshi Hatakeyama, Ehime, JP;
Takatomo Sasaki, Osaka, JP;
Yusuke Mori, Osaka, JP;
Fumio Kawamura, Osaka, JP;
Yasuo Kitaoka, Osaka, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.