The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Jan. 06, 2012
Applicant:
Yoshitsugu Tanaka, Yamanashi, JP;
Inventor:
Yoshitsugu Tanaka, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A disclosed temperature sensor includes a charge trap structure including a silicon oxide film formed on a substrate; an aluminum oxide film that is formed on the silicon oxide film, wherein oxygen is injected into the aluminum oxide film from an upper surface thereof; and an electrode formed on the aluminum oxide film, wherein a flat band voltage of the charge trap structure is temperature dependent.
Tanaka, Yoshitsugu. (2013). Temperature sensor, method of manufacturing the temperature sensor, semiconductor device, method of manufacturing the semiconductor device, and method of controlling the semiconductor device (U.S. Patent No. 8570825). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8570825
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile