The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Dec. 01, 2009
Yo Sato, Kanagawa, JP;
Katsumi Hoshino, Kanagawa, JP;
Masato Shiimoto, Kanagawa, JP;
Takeshi Nakagawa, Ibaraki, JP;
Hiroyuki Hoshiya, Kanagawa, JP;
Yo Sato, Kanagawa, JP;
Katsumi Hoshino, Kanagawa, JP;
Masato Shiimoto, Kanagawa, JP;
Takeshi Nakagawa, Ibaraki, JP;
Hiroyuki Hoshiya, Kanagawa, JP;
HGST Netherlands B.V., Amsterdam, NL;
Abstract
According to one embodiment, a differential magnetoresistive effect element comprises a first magnetoresistive effect element having a first pinning layer, a first intermediate layer, and a first free layer. The differential magnetoresistive effect element also comprises a second magnetoresistive effect element stacked via a spacer layer above the first magnetoresistive effect element, the second magnetoresistive effect element having a second pinning layer, a second intermediate layer, and a second free layer. The first magnetoresistive effect element and the second magnetoresistive effect element show in-opposite-phase resistance change in response to a magnetic field in the same direction, and tptpis satisfied when a thickness of the first pinning layer is tp, and a thickness of the second pinning layer is tp. In another embodiment, the first and second magnetoresistive effect elements may be CPP-GMR elements. Other elements, heads, and magnetic recording/reading devices are described according to other embodiments.