The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Sep. 14, 2011
Applicants:
Julien Le Coz, Grenoble, FR;
Alexandre Valentian, Saint Egrève, FR;
Philippe Flatresse, Froges, FR;
Sylvain Engels, Meylan, FR;
Inventors:
Julien Le Coz, Grenoble, FR;
Alexandre Valentian, Saint Egrève, FR;
Philippe Flatresse, Froges, FR;
Sylvain Engels, Meylan, FR;
Assignee:
STMicroelectronics SA, Montrouge, FR;
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.