The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Apr. 04, 2012
Itaru Kanno, Kanagawa, JP;
Itaru Kanno, Kanagawa, JP;
Renesas Electronic Corporation, Kawasaki-shi, JP;
Abstract
A manufacturing method of a semiconductor device is provided which can improve the performance of the semiconductor device. Ion implantation is applied to nMIS regionsA andB and pMIS regionsC andD of a semiconductor substratewith offset spacers formed over sidewalls of gate electrodes GE, GE, GE, and GEto thereby form extension regions for source and drain. In this case, a different photoresist pattern is used for each of the nMIS regionsA andB and the pMIS regionsC andD to individually perform the corresponding ion implantation. Every time the photoresist pattern is re-created, the offset spacer is also re-created.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile