The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Mar. 13, 2012
Chien-yang Chen, Kaohsiung, TW;
Chen-hua Tsai, Hsinchu County, TW;
Shih-fang Hong, Tainan, TW;
Po-chao Tsao, New Taipei, TW;
Ming-te Wei, Changhua County, TW;
Chien-Yang Chen, Kaohsiung, TW;
Chen-Hua Tsai, Hsinchu County, TW;
Shih-Fang Hong, Tainan, TW;
Po-Chao Tsao, New Taipei, TW;
Ming-Te Wei, Changhua County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device is described. A substrate having thereon a polysilicon resistor is provided. A dielectric layer is formed over the substrate covering the polysilicon resistor. The dielectric layer is etched to form a contact opening over the polysilicon resistor, with overetching into the polysilicon resistor. A metal silicide layer is formed on the polysilicon resistor in the contact opening. A metal material is filled in the contact opening. A portion of the dielectric layer, the metal material, and a portion of the polysilicon resistor are removed to expose the metal silicide layer. A metal contact is formed over the metal silicide layer.