The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8566674 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 22, 2013

Filed:

Aug. 11, 2009
Applicant:

Ward D. Parkinson, Boise, ID (US);

Inventor:

Ward D. Parkinson, Boise, ID (US);

Assignee:

Ovonyx, Inc., Sterling Heights, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); H03M 13/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase change memory may be utilized in place of more conventional, higher volume memories such as static random access memory, flash memory, or dynamic random access memory. To account for the fact that the phase change memory is not yet a high volume technology, an error correcting code may be incorporated. The error correcting code may be utilized in ways which do not severely negatively impact read access times, in some embodiments.


Find Patent Forward Citations

Parkinson, Ward. (2013). Using a phase change memory as a high volume memory (U.S. Patent No. 8566674). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8566674

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