The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

Jan. 06, 2009
Applicants:

Yoshimichi Harada, Kanagawa, JP;

Masami Suzuki, Tokyo, JP;

Yoshihiro Nabe, Tokyo, JP;

Yuji Takaoka, Kanagawa, JP;

Tatsuo Suemasu, Shizuoka, JP;

Hideyuki Wada, Chiba, JP;

Masanobu Saruta, Chiba, JP;

Inventors:

Yoshimichi Harada, Kanagawa, JP;

Masami Suzuki, Tokyo, JP;

Yoshihiro Nabe, Tokyo, JP;

Yuji Takaoka, Kanagawa, JP;

Tatsuo Suemasu, Shizuoka, JP;

Hideyuki Wada, Chiba, JP;

Masanobu Saruta, Chiba, JP;

Assignees:

Sony Corporation, Tokyo, JP;

Fujikura Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has another insulating layer formed in the via hole and a conductive layer formed thereon. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.


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