The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

Apr. 26, 2012
Applicants:

John Chen, Palo Alto, CA (US);

IL Kwan Lee, San Ramon, CA (US);

Hong Chang, Cupertino, CA (US);

Wenjun LI, Shanghai, CN;

Anup Bhalla, Santa Clara, CA (US);

Hamza Yilmaz, Saratoga, CA (US);

Inventors:

John Chen, Palo Alto, CA (US);

Il Kwan Lee, San Ramon, CA (US);

Hong Chang, Cupertino, CA (US);

Wenjun Li, Shanghai, CN;

Anup Bhalla, Santa Clara, CA (US);

Hamza Yilmaz, Saratoga, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.


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