The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8563352 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 22, 2013

Filed:

Mar. 30, 2010
Applicants:

Mohamed M. Hiliali, Sunnyvale, CA (US);

S. Brad Herner, San Jose, CA (US);

Inventors:

Mohamed M. Hiliali, Sunnyvale, CA (US);

S. Brad Herner, San Jose, CA (US);

Assignee:

GTAT Corporation, Nashua, NH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
Abstract

Low-relief texture can be created by applying and firing frit paste on a silicon surface. Where frit contacts the surface at high temperature, it etches silicon, dissolving silicon in the softened glass frit. The result is a series of small, randomly located pits, which produce a near-Lambertian surface, suitable for use in a photovoltaic cell. This texturing method consumes little silicon, and is advantageously used in a photovoltaic cell in which a thin silicon lamina comprises the base region of the cell. When the lamina is formed by implanting ions in a donor wafer to form a cleave plane and cleaving the lamina from the donor wafer at the cleave plane, the ion implantation step will serve to translate texture formed at a first surface to the cleave plane, and thus to the second, opposing surface following cleaving. Low-relief texture formed by other methods can be translated from the first surface to the second surface in this way as well.


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