The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jun. 14, 2011
Burn Jeng Lin, Hsin-Chu, TW;
Jeng Horng Chen, Hsin-Chu, TW;
Chun-kuang Chen, Hsin-Chu Hsien, TW;
Tsai-sheng Gau, Hsin-Chu, TW;
Ru-gun Liu, Zhubei, TW;
Jen-chieh Shih, Jhubei, TW;
Burn Jeng Lin, Hsin-Chu, TW;
Jeng Horng Chen, Hsin-Chu, TW;
Chun-Kuang Chen, Hsin-Chu Hsien, TW;
Tsai-Sheng Gau, Hsin-Chu, TW;
Ru-Gun Liu, Zhubei, TW;
Jen-Chieh Shih, Jhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.