The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

Apr. 24, 2009
Applicants:

Kazuyoshi Yaguchi, Tokyo, JP;

Ryuji Sotoaka, Tokyo, JP;

Inventors:

Kazuyoshi Yaguchi, Tokyo, JP;

Ryuji Sotoaka, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid. A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.


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