The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Mar. 16, 2010
Xian Liu, Sunnyvale, CA (US);
Michael James Heinz, Livermore, CA (US);
Eugene Jinglun Tam, Saratoga, CA (US);
Michael K. Doan, Milpitas, CA (US);
Alexander Kotov, Sunnyvale, CA (US);
Tho Ngoc Dang, San Jose, CA (US);
Jack Edward Frayer, Boulder Creek, CA (US);
Jung Hee Yun, Fremont, CA (US);
Thuan T. VU, San Jose, CA (US);
Xian Liu, Sunnyvale, CA (US);
Michael James Heinz, Livermore, CA (US);
Eugene Jinglun Tam, Saratoga, CA (US);
Michael K. Doan, Milpitas, CA (US);
Alexander Kotov, Sunnyvale, CA (US);
Tho Ngoc Dang, San Jose, CA (US);
Jack Edward Frayer, Boulder Creek, CA (US);
Jung Hee Yun, Fremont, CA (US);
Thuan T. Vu, San Jose, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.