The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2013

Filed:

Dec. 29, 2011
Applicants:

Olivier Le Neel, Singapore, SG;

Stefania Maria Serena Privitera, Catania, IT;

Pascale Dumont-girard, St Joseph de Riviere, FR;

Maurizogabriele Castorina, Catania, IT;

Calvin Leung, Singapore, SG;

Inventors:

Olivier Le Neel, Singapore, SG;

Stefania Maria Serena Privitera, Catania, IT;

Pascale Dumont-Girard, St Joseph de Riviere, FR;

MaurizoGabriele Castorina, Catania, IT;

Calvin Leung, Singapore, SG;

Assignees:

STMicroelectronics (Grenoble 2) SAS, Grenoble, FR;

STMicroelectronics S.r.l., Agrate Brianza (MI), IT;

STMicroelectronics Pte Ltd., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C 7/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process is described for integrating two closely spaced thin films without deposition of the films through deep vias. The films may be integrated on a wafer and patterned to form a microscale heat-trimmable resistor. A thin-film heating element may be formed proximal to a thin-film resistive element, and heat generated by the thin-film heater can be used to permanently trim a resistance value of the thin-film resistive element. Deposition of the thin films over steep or abrupt topography is minimized by using a process in which the thin films are deposited in a sequence that falls between depositions of thick metal contacts to the thin films.


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